• Product
    • Rectifier Devices
      • Rectifier Bridge
        • Soft Recovery Bridge
          Product Description

          By Optimizing the diode Ta/Tb (Turn-on time/Turn-off  time) soft recovery characteristics,it has greatly reduce the occurrence of harmonic oscillations to reduce or reduce the use of EMI suppression devices or specifications around the bridge, such as X capacitor, common mode inductor, differential mode inductor, etc.

          Product Feature
          1
          Improve the EMI/EMC
          Improve low frequency conduction characteristic and reduce the stray inductance of AC input lines,suppress high-frequency interference caused by AC input voltage rectification through smooth recovery characteristic of rectifier diodes in rectifier bridge stack.
          2
          Save BOM costs
          Effectively reduce the use of common-mode inductor and X capacitor at the input terminal, change from ordinary common-mode inductor + X capacitor+ differential-mode inductor to Pi ( π) filter (CLC filter) to reduce the BOM costs.
          More
        • Standard-Rectifier Bridge
          Product Description

          The connection point of the negative poles of the two diodes is the "Positive pole" of the full-bridge DC output terminal, and the connection point of the positive poles of the two diodes is the "Negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic. 

          Product Feature
          1
          Standard Rectifier Bridge
          The rectifier in the rectifier bridge completes the work through the unidirectional conductivity of the diode.To put it simply, the diode is unidirectional, it is forward conduction and reverse cut-off. The diode only allows current to flow in one direction, so when it is connected to the AC circuit, it can make the current in the circuit flow only in one direction, what is called ”rectifier”
          More
        • Schottky Rectifier Bridge
          Product Description

          The Schottky rectifier bridge product is connected by four Schottky silicon diode bridges with four lead pins. The connection point of the negative pole of the two diodes is the "positive pole" of the full-bridge DC output terminal, and the connection point of the positive pole of the two diodes is the "negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic

          Product Feature
          1
          Foward Voltage Drop
          Low forward voltage drop
          2
          Packages
          Multi Packages to meet all kinds of Power supply requirements
          More
        • LOW VF Rectifier Bridge
          Product Description

          The LOW VF rectifier bridge product is connected by four low-voltage drop rectifier silicon chips as a bridge, with four lead pins. The connection point of the two diode negative poles is the "Positive pole" of the full-bridge DC output terminal, and the connection point of the two diode positive poles is the "Negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic. LOW VF is a rectifier bridge with ultra low forward voltage drop.

          Product Feature
          1
          Low VF Rectifier Bridge
          LOW VF rectifier bridge refers to a forward voltage drop lower than a standard rectifier bridge, according to the Calorie calculation formula Q = I2Rt = Pt = UIt = U2t/R = I2Rt. The lower voltage, the less heat is generated and the corresponding active power is higher. Therefore, in the same power application circuit , the efficiency of the LOW VF rectifier bridge is higher and the heat is lower.
          More
        • Inverter Bridge
          Product Description

          The Inverter Bridge is  integrated by four fast recovery diodes,which package four chips on a bracket for bridge connection with four lead pins. The connection point of the negative poles of the two diodes is the "positive pole" of the DC output terminal, the connection point of the positive poles of the two diodes is the "negative pole" of the DC output terminal, and the other two pins are the AC input terminals, which is packaged with insulation plastic .

          Product Feature
          1
          Inverter Bridge
          The inverter Bridge has a high operating frequency (10KHz-70KHz) and small PCBA space; the reverse recovery time is relatively short with 75ns and the stray capacitance is relatively small, so it has advantages of EMI improvement.
          More
        • Sampling Bridge
          Product Description

          A rectifier bridge with integrated sampling function, which realizes power distribution and circuit protection by collecting input current in the circuit.

          Product Feature
          1
          1)Relatively Low temperature coefficient of resistance and wider operating temperature range (below 480 ° C)
          It has a low temperature coefficient of resistance, low temperature drift and relatively stable output power.The precision resistor is packaged inside the rectifier bridge, and heat sink can be used to dissipate heat from the precision resistor, effectively reducing the temperature of the precision resistor and reducing the impact of temperature rise on the resistance value.
          2
          2)Simplify the PCB assembly process to reduce the assembly cost, and achieve high consistency.
          Simplify the PCB assembly process, reduce the assembly cost and is cost-effective. Improve the problems of complicated installation process of external precision resistors and poor consistency of resistance values with high defect rate during mass production. Improve power consistency and stability with high consistency during mass production.
          3
          Reduce interference
          Improve the problem of interference increase and acquisition accuracy deviation caused by precision resistors crossing the circuit board and the main loop being too long.
          More
        • Switching Bridge
          Product Description

          The switching bridge is connected by four high-speed switching diodes as a bridge, with four lead pins. The connection point of the negative poles of the two diodes is the "positive pole" of the full-bridge DC output terminal, and the connection point of the positive poles of the two diodes is the "negative pole" of the full-bridge DC output terminal, which is sealed with insulation plastic.

          Product Feature
          1
          Switching Bridge
          The switching bridge has extremely low forward voltage drop and extremely high switching speed. With its extremely low loss and fast switching speed, it is widely used in the power grid monitoring, smart meters, instruments and other industries.
          More
      • Schottky Barrier Diode
        • Standard Schottky Diode
          Product Description

          World Schottky diode uses advanced packaging technology and have the characteristics of low forward voltage drop. The current covers 1A to 60A, and the voltage covers from 40V to 200V, which can meet the high efficiency and high reliability requirements of power products.

          Product Feature
          1
          Forward Voltage Drop
          Low forward voltage drop
          2
          Packages
          Multi Packages to meet all kinds of Power supply requirements
          More
        • LOW VF Schottky
          Product Description

          World LOW VF Schottky diode adopts advanced Trench technology with very low VF value and extremely low high- temperature leakage current, which can better meet the high efficiency and high reliability requirements of power supply.

          Product Feature
          1
          VF value
          Very low VF value (see Product selection list for detail)
          2
          Leakage Current
          Extremely low high-temperature leakage current (see IR value in Product selection list for detail)
          3
          Packages
          Multi Packages to meet all kinds of Power supply requirements
          More
        • High-Voltage Schottky
          Product Description

          World high-voltage Schottky diode has a low VF value and extremely low reverse leakage current (Ir),  showing the good low-temperature rise characteristics.  The VRRM is up to 350V, and the current range covers from 5A to 40A, which can better meet the high-efficiency and high-reliability requirements of high-voltage output power supplies.

          Product Feature
          1
          VF value
          Lower VF value ( (see product selection list for detail)
          2
          Reverse Leakage Current
          Extremely low reverse leakage current (Ir)
          3
          Packages
          Multiple packages to meet all kinds of power supply requirements
          More
      • Fast Recovery Diode
        • Standard Fast Recovery Diode
          Product Description

          World Fast recovery diode adopts advanced package technology, with voltages from 100V to 1700V, current ranging from 1A to 300A, and reverse recovery time from 16ns to 500ns. It is suitable for PFC circuits, high-frequency and high-voltage power supply, etc.

          Product Feature
          1
          Voltage Ranges
          Ultra-wide range of voltage ranges
          2
          Packages
          Multi Packages to meet all kinds of Power supply requirements
          More
        • Low Trr Super Fast Recovery Diode
          Product Description

          World Low Trr Super Fast Recovery Diode has an extremely low reverse recovery time Trr and an extremely low reverse recovery charge Qrr, as well as super-fast switching speed. It is used in PFC circuits under hard switching conditions and secondary rectification circuits of high-voltage and high-frequency power supplies.

          Product Feature
          1
          TRR and QRR
          Extremely low Trr and Qrr (see product selection list for detail)
          2
          Leakage Current
          Low leakage Current
          3
          Switching Speed
          Super fast switching speed
          4
          Switching Loss
          Reduce switching losses
          More
        • Low VF Fast recovery Diode
          Product Description

          World LOW VF Fast recovery diode has low VF value and low leakage current, which is applied to PFC circuit, high-frequency and high-voltage circuit, and secondary rectifier circuit.

          Product Feature
          1
          VF value
          Low VF value
          2
          Leakage Current
          Low leakage current
          3
          Switching Speed
          Super fast switching speed
          More
        • Common-Cathode and Common-Anode FRD
          Product Description

          World Common-Cathode and Common-Anode Fast recovery diode has the characteristics of good consistency, low VF value, low Trr  and low leakage current, which is applied to high-frequency bridge rectifier circuit, positive and negative voltage output rectifier circuit and high-frequency high-voltage high-current circuit.

          Product Feature
          1
          VF Value
          Low VF value
          2
          Reverse recovery time
          Low-reverse recovery time
          3
          Leakage Current
          Low leakage current
          More
      • Switching Transistor
        • All series
          Product Description

          World switching transistor has a fast recovery time and high switching speed, and is widely used in power supply, audio, video, wireless communication, industry and other fields

          Product Feature
          1
          TRR
          Smaller Trr (reverse recovery time)
          2
          Switching speed
          Fast switching speed
          3
          Package
          Small package,small size
          More
    • Protection Devices
      • TVS
        • TVS
          Product Description
          Transient Suppression Diode, TVS. All series of products are available
          Product Feature
          1
          TVS
          TVS is a high-quality surge absorber, which is connected in parallel with diodes (volt-ampere characteristics) in the circuit.Induced lightning strikes in nature, electrostatic discharge, and current surges in electronic devices all pose severe challenges to modern electronic systems. When transient voltages are generated in the circuit, TVS uses the avalanche principle to instantly shunt and limit the voltage with a response speed of P seconds, thus protecting the load from damage.
          More
      • ESD
        • ESD
          Product Description

          Antistatic devices, ESD. For mainstream competing products, our company has alternative products, and we accept customized materials for ESD

          Product Feature
          1
          ESD
          ESD, (Transient Voltage Suppressor) (semiconductor) static suppressor, a miniaturized TVS, has the same characteristics and working methods as TVS. However, with the reduction of the internal chip area, it has the characteristics of small size, small capacitance value (capacitance and volume are proportional), and diverse packaging methods. It is mainly used for anti-static and anti-small pulse group processing of some small portable devices. For ESD TVS multi-channel protection products, they are also called array products (IC).
          More
      • GDT
        • GDT
          Product Description

          Gas Discharge Tube, GDT. A full range of products are available, and ultra-thin products are currently being developed.

          Product Feature
          1
          GDT
          GDT "Ceramic Gas Discharge Tube" is a short-circuit protection device packaged in ceramic and filled with low-voltage inert gas. It is generally divided into two-electrode and three-electrode structures. The basic working principle is gas discharge. When the electric field strength between the electrodes exceeds the breakdown strength of the gas, it causes gap discharge, thereby limiting the voltage between the electrodes and protecting other devices connected in parallel with the discharge tube.
          More
      • MOV
        • MOV
          Product Description

          Zinc oxide varistor, MOV. Our company only produces SMD-MOV patch products and GMOV composite functional products.

          Product Feature
          1
          MOV
          MOV is a metal oxide semiconductor nonlinear resistor component mainly composed of zinc oxide. The so-called varistor is sensitive to voltage. When the voltage reaches a certain value, the component starts to operate.
          More
      • TSS
        • TSS
          Product Description

          Thyristor Surge Suppressors,TSS. All products are available

          Product Feature
          1
          TSS
          TSS is a PNPN component, a free voltage-controlled thyristor without a gate electrode. When the voltage exceeds its peak off-state voltage (or avalanche voltage), semiconductor discharge will clamp the transient voltage to the switching voltage (or turning voltage) value of the component. As the voltage continues to increase, the semiconductor discharge tube enters the conducting state due to negative resistance effect. Only when the current is less than the maintenance current, the component resets and returns to its high impedance state.
          More
    • Power Devices
      • MOS
        • SGT MOS
          Product Description

          World SGT MOS has extremely low RDs (on), low Qg and Ciss, and fast switching speed, which can meet the requirements of product temperature rise and efficiency.

          Product Feature
          1
          FOM value
          Lower FOM (RDs (on) * Qg) value
          2
          Swithing Speed
          Fast switching speed
          3
          Package
          Multiple packages to meet various power needs
          More
        • Planar MOS
          Product Description

          World Planar MOS has the characteristics of low RDs (on) and Ciss ,as well as strong EAS performance, which can meet the requirements of product efficiency and reliability.

          Product Feature
          1
          RDs(on) and CISS
          Low RDs (on) and Ciss
          2
          EAS Performance
          Strong EAS performance
          3
          Package
          Multiple packages to meet various power needs
          More
        • Trench Mos
          Product Description

          World Trench MOS has low RDs (on), Qg, and Ciss, fast switching speed, strong EAS performance, and short -circuit resistance performance, which can meet the requirements of product efficiency and reliability.

          Product Feature
          1
          FOM Value
          Lower FOM (RDs (on) * Qg) value
          2
          EAS Performance
          Strong EAS performance
          3
          Short Circuit Resistance
          Short circuit resistance
          4
          Package
          Multiple packages to meet various power needs
          More
        • SJ MOSFET
          Product Description

          World SJ (Super Junction) MOS adopts a multi-layer Epitaxial process, which has the characteristics of low RDS (on), small junction capacitance, small Qg, easy driving, and fast switching speed, making it easier for the power supply to achieve high efficiency and high reliability.

          Product Feature
          1
          RDS
          Low RDS
          2
          Switching speed
          Fast switching speed
          3
          Junction Capacitance
          Small junction capacitance, small Qg, easy to drive
          4
          Packages
          Various Packages to meet different power supply request
          More
    • 3rd Generation Semiconductor
      • SIC
        • SIC DIODE
          Product Description

          World silicon carbide diodes have extremely small reverse recovery time, high surge current, high efficiency and reliability, and are packaged with PDFN5 * 6, TO-252, TO-220, TO-247, etc.

          Product Feature
          1
          TRR
          Extremely small TRR
          2
          Surge Current
          High surge current
          3
          Switching speed
          Fast switching speed
          4
          Packages
          Various packages
          More
        • SIC MOS
          Product Description

          World silicon carbide MOS has low RDS (on) , high switching speed, high efficiency and reliability, and is packaged in TOLL, TO-247, etc.

          Product Feature
          1
          RDS(on)
          （RDS（on））Low on-resistance (RDS(on))
          2
          Switching speed
          High switching speed
          More
    • EMI Improvement
      • Absorb Diode Rectifier
        • 30M-60M Radiation
          Product Description

          World Absorb Diode Rectifier,it has a longer storage time and lower Irr, as well as a longer and gentle slope of reverse recovery characteristics which can smoothly recover the current. It is applied to the RCD absorption circuit of power supply for better EMI characteristics to meet high efficiency and high reliability requirements of power supply products.

          Product Feature
          1
          Lower No-load Loss
          SOD-123FL Package, with Lower no-load loss
          2
          Efficiency
          Light load at 10%, the conversion efficiency is improved by 2% - 3%, and the comprehensive efficiency is increased by 0.8%
          3
          EMI Radiation
          Improvement of EMI radiation for 30MHZ~60MHZ frequency
          More
      • Soft Recovery Bridge
        • 9K-1M Conduction
          Product Description

          By Optimizing the diode Ta/Tb (Turn-on time/Turn-off  time) soft recovery characteristics,it has greatly reduce the occurrence of harmonic oscillations to reduce or reduce the use of EMI suppression devices or specifications around the bridge, such as X capacitor, common mode inductor, differential mode inductor, etc.

          Product Feature
          1
          Improve the EMI/EMC
          Improve low frequency conduction characteristic and reduce the stray inductance of AC input lines,suppress high-frequency interference caused by AC input voltage rectification through smooth recovery characteristic of rectifier diodes in rectifier bridge stack.
          2
          Save BOM costs
          Effectively reduce the use of common-mode inductor and X capacitor at the input terminal, change from ordinary common-mode inductor + X capacitor+ differential-mode inductor to Pi ( π) filter (CLC filter) to reduce the BOM costs.
          More
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Reliability Experiment After-sales service
Reliability Experiment
01
高温直流反向偏压测试（High Temperature Reverse Bias Test）
实验时机(计划) 试验周期(H) 取样数量(PCS)
新品研发 1000 77*3(依据AEC-Q101)
年度试验 1000 77
新物料确认 168 77*3(依据AEC-Q101)
月度可靠性监控 168 22
  • 实验类别：环境（温度）电应力复合验证
  • 实验目的：验证产品在高温状态下芯片的反向工作能力
  • 实验参考标准： GB/T 4023、JESD22-A108
  • 实验条件： VR(VZ)=80%*VRMAX，TA=TJ±5℃
  • 实验设备：高温反偏试验系统
02
间歇寿命试验测试（Intermittent Operational Life）
实验时机(计划) 试验周期(H) 取样数量(PCS)
新品研发 1000 77*3(依据AEC-Q101)
年度试验 1000 77
新物料确认 168 77*3(依据AEC-Q101)
月度可靠性监控 168 22
  • 实验类别：环境（温度）电应力复合验证
  • 实验目的：验证产品在高温状态下芯片的反向工作能力
  • 实验参考标准： GB/T 4023、JESD22-A108
  • 实验条件： VR(VZ)=80%*VRMAX，TA=TJ±5℃
  • 实验设备：高温反偏试验系统
03
工作寿命试验测试（Continuous Operation Test）
实验时机(计划) 试验周期(H) 取样数量(PCS)
新品研发 1000 77*3(依据AEC-Q101)
年度试验 1000 77
新物料确认 168 77*3(依据AEC-Q101)
月度可靠性监控 168 22
  • 实验类别：环境（温度）电应力复合验证
  • 实验目的：验证产品在高温状态下芯片的反向工作能力
  • 实验参考标准： GB/T 4023、JESD22-A108
  • 实验条件： VR(VZ)=80%*VRMAX，TA=TJ±5℃
  • 实验设备：高温反偏试验系统
04
抗静电能力试验(ESD Test)
实验时机(计划) 试验周期(H) 取样数量(PCS)
新品研发 1000 77*3(依据AEC-Q101)
年度试验 1000 77
新物料确认 168 77*3(依据AEC-Q101)
月度可靠性监控 168 22
  • 实验类别：环境（温度）电应力复合验证
  • 实验目的：验证产品在高温状态下芯片的反向工作能力
  • 实验参考标准： GB/T 4023、JESD22-A108
  • 实验条件： VR(VZ)=80%*VRMAX，TA=TJ±5℃
  • 实验设备：高温反偏试验系统
05
浪涌电流测试（Peak Forward Surge Current Test）
实验时机(计划) 试验周期(H) 取样数量(PCS)
新品研发 1000 77*3(依据AEC-Q101)
年度试验 1000 77
新物料确认 168 77*3(依据AEC-Q101)
月度可靠性监控 168 22
  • 实验类别：环境（温度）电应力复合验证
  • 实验目的：验证产品在高温状态下芯片的反向工作能力
  • 实验参考标准： GB/T 4023、JESD22-A108
  • 实验条件： VR(VZ)=80%*VRMAX，TA=TJ±5℃
  • 实验设备：高温反偏试验系统
06
高温贮存试验（High Temperature Storage Test）
实验时机(计划) 试验周期(H) 取样数量(PCS)
新品研发 1000 77*3(依据AEC-Q101)
年度试验 1000 77
新物料确认 168 77*3(依据AEC-Q101)
月度可靠性监控 168 22
  • 实验类别：环境（温度）电应力复合验证
  • 实验目的：验证产品在高温状态下芯片的反向工作能力
  • 实验参考标准： GB/T 4023、JESD22-A108
  • 实验条件： VR(VZ)=80%*VRMAX，TA=TJ±5℃
  • 实验设备：高温反偏试验系统
07
低温贮存试验（Low Temperature Storage Test）
实验时机(计划) 试验周期(H) 取样数量(PCS)
新品研发 1000 77*3(依据AEC-Q101)
年度试验 1000 77
新物料确认 168 77*3(依据AEC-Q101)
月度可靠性监控 168 22
  • 实验类别：环境（温度）电应力复合验证
  • 实验目的：验证产品在高温状态下芯片的反向工作能力
  • 实验参考标准： GB/T 4023、JESD22-A108
  • 实验条件： VR(VZ)=80%*VRMAX，TA=TJ±5℃
  • 实验设备：高温反偏试验系统
08
恒温恒湿存储试验（Constant Temperature/Humidity Storage Test）
实验时机(计划) 试验周期(H) 取样数量(PCS)
新品研发 1000 77*3(依据AEC-Q101)
年度试验 1000 77
新物料确认 168 77*3(依据AEC-Q101)
月度可靠性监控 168 22
  • 实验类别：环境（温度）电应力复合验证
  • 实验目的：验证产品在高温状态下芯片的反向工作能力
  • 实验参考标准： GB/T 4023、JESD22-A108
  • 实验条件： VR(VZ)=80%*VRMAX，TA=TJ±5℃
  • 实验设备：高温反偏试验系统
09
温度循环测试（Temperature Cycling Test）
实验时机(计划) 试验周期(H) 取样数量(PCS)
新品研发 1000 77*3(依据AEC-Q101)
年度试验 1000 77
新物料确认 168 77*3(依据AEC-Q101)
月度可靠性监控 168 22
  • 实验类别：环境（温度）电应力复合验证
  • 实验目的：验证产品在高温状态下芯片的反向工作能力
  • 实验参考标准： GB/T 4023、JESD22-A108
  • 实验条件： VR(VZ)=80%*VRMAX，TA=TJ±5℃
  • 实验设备：高温反偏试验系统
10
耐焊接热试验/可焊性试验（Solder Heat Resistance Test/ Solderability Test ）
实验时机(计划) 试验周期(H) 取样数量(PCS)
新品研发 1000 77*3(依据AEC-Q101)
年度试验 1000 77
新物料确认 168 77*3(依据AEC-Q101)
月度可靠性监控 168 22
  • 实验类别：环境（温度）电应力复合验证
  • 实验目的：验证产品在高温状态下芯片的反向工作能力
  • 实验参考标准： GB/T 4023、JESD22-A108
  • 实验条件： VR(VZ)=80%*VRMAX，TA=TJ±5℃
  • 实验设备：高温反偏试验系统
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