Trench Mos

Product
- Rectifier Devices
  - Rectifier Bridge
    
    Soft Recovery Bridge
    
    Product Description
    
    By Optimizing the diode Ta/Tb (Turn-on time/Turn-off time) soft recovery characteristics,it has greatly reduce the occurrence of harmonic oscillations to reduce or reduce the use of EMI suppression devices or specifications around the bridge, such as X capacitor, common mode inductor, differential mode inductor, etc.
    
    Product Feature
    
    1
    
    Improve the EMI/EMC
    
    Improve low frequency conduction characteristic and reduce the stray inductance of AC input lines,suppress high-frequency interference caused by AC input voltage rectification through smooth recovery characteristic of rectifier diodes in rectifier bridge stack.
    
    2
    
    Save BOM costs
    
    Effectively reduce the use of common-mode inductor and X capacitor at the input terminal, change from ordinary common-mode inductor + X capacitor+ differential-mode inductor to Pi ( π) filter (CLC filter) to reduce the BOM costs.
    
    More
    
    Standard-Rectifier Bridge
    
    Product Description
    
    The connection point of the negative poles of the two diodes is the "Positive pole" of the full-bridge DC output terminal, and the connection point of the positive poles of the two diodes is the "Negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic.
    
    Product Feature
    
    1
    
    Standard Rectifier Bridge
    
    The rectifier in the rectifier bridge completes the work through the unidirectional conductivity of the diode.To put it simply, the diode is unidirectional, it is forward conduction and reverse cut-off. The diode only allows current to flow in one direction, so when it is connected to the AC circuit, it can make the current in the circuit flow only in one direction, what is called ”rectifier”
    
    More
    
    Schottky Rectifier Bridge
    
    Product Description
    
    The Schottky rectifier bridge product is connected by four Schottky silicon diode bridges with four lead pins. The connection point of the negative pole of the two diodes is the "positive pole" of the full-bridge DC output terminal, and the connection point of the positive pole of the two diodes is the "negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic
    
    Product Feature
    
    1
    
    Foward Voltage Drop
    
    Low forward voltage drop
    
    2
    
    Packages
    
    Multi Packages to meet all kinds of Power supply requirements
    
    More
    
    LOW VF Rectifier Bridge
    
    Product Description
    
    The LOW VF rectifier bridge product is connected by four low-voltage drop rectifier silicon chips as a bridge, with four lead pins. The connection point of the two diode negative poles is the "Positive pole" of the full-bridge DC output terminal, and the connection point of the two diode positive poles is the "Negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic. LOW VF is a rectifier bridge with ultra low forward voltage drop.
    
    Product Feature
    
    1
    
    Low VF Rectifier Bridge
    
    LOW VF rectifier bridge refers to a forward voltage drop lower than a standard rectifier bridge, according to the Calorie calculation formula Q = I2Rt = Pt = UIt = U2t/R = I2Rt. The lower voltage, the less heat is generated and the corresponding active power is higher. Therefore, in the same power application circuit , the efficiency of the LOW VF rectifier bridge is higher and the heat is lower.
    
    More
    
    Inverter Bridge
    
    Product Description
    
    The Inverter Bridge is integrated by four fast recovery diodes,which package four chips on a bracket for bridge connection with four lead pins. The connection point of the negative poles of the two diodes is the "positive pole" of the DC output terminal, the connection point of the positive poles of the two diodes is the "negative pole" of the DC output terminal, and the other two pins are the AC input terminals, which is packaged with insulation plastic .
    
    Product Feature
    
    1
    
    Inverter Bridge
    
    The inverter Bridge has a high operating frequency (10KHz-70KHz) and small PCBA space; the reverse recovery time is relatively short with 75ns and the stray capacitance is relatively small, so it has advantages of EMI improvement.
    
    More
    
    Sampling Bridge
    
    Product Description
    
    A rectifier bridge with integrated sampling function, which realizes power distribution and circuit protection by collecting input current in the circuit.
    
    Product Feature
    
    1
    
    1)Relatively Low temperature coefficient of resistance and wider operating temperature range (below 480 ° C)
    
    It has a low temperature coefficient of resistance, low temperature drift and relatively stable output power.The precision resistor is packaged inside the rectifier bridge, and heat sink can be used to dissipate heat from the precision resistor, effectively reducing the temperature of the precision resistor and reducing the impact of temperature rise on the resistance value.
    
    2
    
    2)Simplify the PCB assembly process to reduce the assembly cost, and achieve high consistency.
    
    Simplify the PCB assembly process, reduce the assembly cost and is cost-effective. Improve the problems of complicated installation process of external precision resistors and poor consistency of resistance values with high defect rate during mass production. Improve power consistency and stability with high consistency during mass production.
    
    3
    
    Reduce interference
    
    Improve the problem of interference increase and acquisition accuracy deviation caused by precision resistors crossing the circuit board and the main loop being too long.
    
    More
    
    Switching Bridge
    
    Product Description
    
    The switching bridge is connected by four high-speed switching diodes as a bridge, with four lead pins. The connection point of the negative poles of the two diodes is the "positive pole" of the full-bridge DC output terminal, and the connection point of the positive poles of the two diodes is the "negative pole" of the full-bridge DC output terminal, which is sealed with insulation plastic.
    
    Product Feature
    
    1
    
    Switching Bridge
    
    The switching bridge has extremely low forward voltage drop and extremely high switching speed. With its extremely low loss and fast switching speed, it is widely used in the power grid monitoring, smart meters, instruments and other industries.
    
    More
  - Schottky Barrier Diode
    
    Standard Schottky Diode
    
    Product Description
    
    World Schottky diode uses advanced packaging technology and have the characteristics of low forward voltage drop. The current covers 1A to 60A, and the voltage covers from 40V to 200V, which can meet the high efficiency and high reliability requirements of power products.
    
    Product Feature
    
    1
    
    Forward Voltage Drop
    
    Low forward voltage drop
    
    2
    
    Packages
    
    Multi Packages to meet all kinds of Power supply requirements
    
    More
    
    LOW VF Schottky
    
    Product Description
    
    World LOW VF Schottky diode adopts advanced Trench technology with very low VF value and extremely low high- temperature leakage current, which can better meet the high efficiency and high reliability requirements of power supply.
    
    Product Feature
    
    1
    
    VF value
    
    Very low VF value (see Product selection list for detail)
    
    2
    
    Leakage Current
    
    Extremely low high-temperature leakage current (see IR value in Product selection list for detail)
    
    3
    
    Packages
    
    Multi Packages to meet all kinds of Power supply requirements
    
    More
    
    High-Voltage Schottky
    
    Product Description
    
    World high-voltage Schottky diode has a low VF value and extremely low reverse leakage current (Ir), showing the good low-temperature rise characteristics. The VRRM is up to 350V, and the current range covers from 5A to 40A, which can better meet the high-efficiency and high-reliability requirements of high-voltage output power supplies.
    
    Product Feature
    
    1
    
    VF value
    
    Lower VF value ( (see product selection list for detail)
    
    2
    
    Reverse Leakage Current
    
    Extremely low reverse leakage current (Ir)
    
    3
    
    Packages
    
    Multiple packages to meet all kinds of power supply requirements
    
    More
  - Fast Recovery Diode
    
    Standard Fast Recovery Diode
    
    Product Description
    
    World Fast recovery diode adopts advanced package technology, with voltages from 100V to 1700V, current ranging from 1A to 300A, and reverse recovery time from 16ns to 500ns. It is suitable for PFC circuits, high-frequency and high-voltage power supply, etc.
    
    Product Feature
    
    1
    
    Voltage Ranges
    
    Ultra-wide range of voltage ranges
    
    2
    
    Packages
    
    Multi Packages to meet all kinds of Power supply requirements
    
    More
    
    Low Trr Super Fast Recovery Diode
    
    Product Description
    
    World Low Trr Super Fast Recovery Diode has an extremely low reverse recovery time Trr and an extremely low reverse recovery charge Qrr, as well as super-fast switching speed. It is used in PFC circuits under hard switching conditions and secondary rectification circuits of high-voltage and high-frequency power supplies.
    
    Product Feature
    
    1
    
    TRR and QRR
    
    Extremely low Trr and Qrr (see product selection list for detail)
    
    2
    
    Leakage Current
    
    Low leakage Current
    
    3
    
    Switching Speed
    
    Super fast switching speed
    
    4
    
    Switching Loss
    
    Reduce switching losses
    
    More
    
    Low VF Fast recovery Diode
    
    Product Description
    
    World LOW VF Fast recovery diode has low VF value and low leakage current, which is applied to PFC circuit, high-frequency and high-voltage circuit, and secondary rectifier circuit.
    
    Product Feature
    
    1
    
    VF value
    
    Low VF value
    
    2
    
    Leakage Current
    
    Low leakage current
    
    3
    
    Switching Speed
    
    Super fast switching speed
    
    More
    
    Common-Cathode and Common-Anode FRD
    
    Product Description
    
    World Common-Cathode and Common-Anode Fast recovery diode has the characteristics of good consistency, low VF value, low Trr and low leakage current, which is applied to high-frequency bridge rectifier circuit, positive and negative voltage output rectifier circuit and high-frequency high-voltage high-current circuit.
    
    Product Feature
    
    1
    
    VF Value
    
    Low VF value
    
    2
    
    Reverse recovery time
    
    Low-reverse recovery time
    
    3
    
    Leakage Current
    
    Low leakage current
    
    More
  - Switching Transistor
    
    All series
    
    Product Description
    
    World switching transistor has a fast recovery time and high switching speed, and is widely used in power supply, audio, video, wireless communication, industry and other fields
    
    Product Feature
    
    1
    
    TRR
    
    Smaller Trr (reverse recovery time)
    
    2
    
    Switching speed
    
    Fast switching speed
    
    3
    
    Package
    
    Small package,small size
    
    More
- Protection Devices
  - TVS
    
    TVS
    
    Product Description
    
    Transient Suppression Diode, TVS. All series of products are available
    
    Product Feature
    
    1
    
    TVS
    
    TVS is a high-quality surge absorber, which is connected in parallel with diodes (volt-ampere characteristics) in the circuit.Induced lightning strikes in nature, electrostatic discharge, and current surges in electronic devices all pose severe challenges to modern electronic systems. When transient voltages are generated in the circuit, TVS uses the avalanche principle to instantly shunt and limit the voltage with a response speed of P seconds, thus protecting the load from damage.
    
    More
  - ESD
    
    ESD
    
    Product Description
    
    Antistatic devices, ESD. For mainstream competing products, our company has alternative products, and we accept customized materials for ESD
    
    Product Feature
    
    1
    
    ESD
    
    ESD, (Transient Voltage Suppressor) (semiconductor) static suppressor, a miniaturized TVS, has the same characteristics and working methods as TVS. However, with the reduction of the internal chip area, it has the characteristics of small size, small capacitance value (capacitance and volume are proportional), and diverse packaging methods. It is mainly used for anti-static and anti-small pulse group processing of some small portable devices. For ESD TVS multi-channel protection products, they are also called array products (IC).
    
    More
  - GDT
    
    GDT
    
    Product Description
    
    Gas Discharge Tube, GDT. A full range of products are available, and ultra-thin products are currently being developed.
    
    Product Feature
    
    1
    
    GDT
    
    GDT "Ceramic Gas Discharge Tube" is a short-circuit protection device packaged in ceramic and filled with low-voltage inert gas. It is generally divided into two-electrode and three-electrode structures. The basic working principle is gas discharge. When the electric field strength between the electrodes exceeds the breakdown strength of the gas, it causes gap discharge, thereby limiting the voltage between the electrodes and protecting other devices connected in parallel with the discharge tube.
    
    More
  - MOV
    
    MOV
    
    Product Description
    
    Zinc oxide varistor, MOV. Our company only produces SMD-MOV patch products and GMOV composite functional products.
    
    Product Feature
    
    1
    
    MOV
    
    MOV is a metal oxide semiconductor nonlinear resistor component mainly composed of zinc oxide. The so-called varistor is sensitive to voltage. When the voltage reaches a certain value, the component starts to operate.
    
    More
  - TSS
    
    TSS
    
    Product Description
    
    Thyristor Surge Suppressors,TSS. All products are available
    
    Product Feature
    
    1
    
    TSS
    
    TSS is a PNPN component, a free voltage-controlled thyristor without a gate electrode. When the voltage exceeds its peak off-state voltage (or avalanche voltage), semiconductor discharge will clamp the transient voltage to the switching voltage (or turning voltage) value of the component. As the voltage continues to increase, the semiconductor discharge tube enters the conducting state due to negative resistance effect. Only when the current is less than the maintenance current, the component resets and returns to its high impedance state.
    
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- Power Devices
  - MOS
    
    SGT MOS
    
    Product Description
    
    World SGT MOS has extremely low RDs (on), low Qg and Ciss, and fast switching speed, which can meet the requirements of product temperature rise and efficiency.
    
    Product Feature
    
    1
    
    FOM value
    
    Lower FOM (RDs (on) * Qg) value
    
    2
    
    Swithing Speed
    
    Fast switching speed
    
    3
    
    Package
    
    Multiple packages to meet various power needs
    
    More
    
    Planar MOS
    
    Product Description
    
    World Planar MOS has the characteristics of low RDs (on) and Ciss ,as well as strong EAS performance, which can meet the requirements of product efficiency and reliability.
    
    Product Feature
    
    1
    
    RDs(on) and CISS
    
    Low RDs (on) and Ciss
    
    2
    
    EAS Performance
    
    Strong EAS performance
    
    3
    
    Package
    
    Multiple packages to meet various power needs
    
    More
    
    Trench Mos
    
    Product Description
    
    World Trench MOS has low RDs (on), Qg, and Ciss, fast switching speed, strong EAS performance, and short -circuit resistance performance, which can meet the requirements of product efficiency and reliability.
    
    Product Feature
    
    1
    
    FOM Value
    
    Lower FOM (RDs (on) * Qg) value
    
    2
    
    EAS Performance
    
    Strong EAS performance
    
    3
    
    Short Circuit Resistance
    
    Short circuit resistance
    
    4
    
    Package
    
    Multiple packages to meet various power needs
    
    More
    
    SJ MOSFET
    
    Product Description
    
    World SJ (Super Junction) MOS adopts a multi-layer Epitaxial process, which has the characteristics of low RDS (on), small junction capacitance, small Qg, easy driving, and fast switching speed, making it easier for the power supply to achieve high efficiency and high reliability.
    
    Product Feature
    
    1
    
    RDS
    
    Low RDS
    
    2
    
    Switching speed
    
    Fast switching speed
    
    3
    
    Junction Capacitance
    
    Small junction capacitance, small Qg, easy to drive
    
    4
    
    Packages
    
    Various Packages to meet different power supply request
    
    More
- 3rd Generation Semiconductor
  - SIC
    
    SIC DIODE
    
    Product Description
    
    World silicon carbide diodes have extremely small reverse recovery time, high surge current, high efficiency and reliability, and are packaged with PDFN5 * 6, TO-252, TO-220, TO-247, etc.
    
    Product Feature
    
    1
    
    TRR
    
    Extremely small TRR
    
    2
    
    Surge Current
    
    High surge current
    
    3
    
    Switching speed
    
    Fast switching speed
    
    4
    
    Packages
    
    Various packages
    
    More
    
    SIC MOS
    
    Product Description
    
    World silicon carbide MOS has low RDS (on) , high switching speed, high efficiency and reliability, and is packaged in TOLL, TO-247, etc.
    
    Product Feature
    
    1
    
    RDS(on)
    
    （RDS（on））Low on-resistance (RDS(on))
    
    2
    
    Switching speed
    
    High switching speed
    
    More
- EMI Improvement
  - Absorb Diode Rectifier
    
    30M-60M Radiation
    
    Product Description
    
    World Absorb Diode Rectifier,it has a longer storage time and lower Irr, as well as a longer and gentle slope of reverse recovery characteristics which can smoothly recover the current. It is applied to the RCD absorption circuit of power supply for better EMI characteristics to meet high efficiency and high reliability requirements of power supply products.
    
    Product Feature
    
    1
    
    Lower No-load Loss
    
    SOD-123FL Package, with Lower no-load loss
    
    2
    
    Efficiency
    
    Light load at 10%, the conversion efficiency is improved by 2% - 3%, and the comprehensive efficiency is increased by 0.8%
    
    3
    
    EMI Radiation
    
    Improvement of EMI radiation for 30MHZ~60MHZ frequency
    
    More
  - Soft Recovery Bridge
    
    9K-1M Conduction
    
    Product Description
    
    By Optimizing the diode Ta/Tb (Turn-on time/Turn-off time) soft recovery characteristics,it has greatly reduce the occurrence of harmonic oscillations to reduce or reduce the use of EMI suppression devices or specifications around the bridge, such as X capacitor, common mode inductor, differential mode inductor, etc.
    
    Product Feature
    
    1
    
    Improve the EMI/EMC
    
    Improve low frequency conduction characteristic and reduce the stray inductance of AC input lines,suppress high-frequency interference caused by AC input voltage rectification through smooth recovery characteristic of rectifier diodes in rectifier bridge stack.
    
    2
    
    Save BOM costs
    
    Effectively reduce the use of common-mode inductor and X capacitor at the input terminal, change from ordinary common-mode inductor + X capacitor+ differential-mode inductor to Pi ( π) filter (CLC filter) to reduce the BOM costs.
    
    More
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Trench Mos

Product Description

World Trench MOS has low RDs (on), Qg, and Ciss, fast switching speed, strong EAS performance, and short -circuit resistance performance, which can meet the requirements of product efficiency and reliability.

Product Feature

1

FOM Value

Lower FOM (RDs (on) * Qg) value

2

EAS Performance

Strong EAS performance

3

Short Circuit Resistance

Short circuit resistance

4

Package

Multiple packages to meet various power needs

Application Circuit

Application Field

Energy storage

Motor drive

Medical power

Adaptor

BMS

Product selection

TYPE	Package	Channel	VDSS (V)	VGS (V)	ID (A)	VGS(th) (V) Min.	VGS(th) (V) Max.	RDS(on)@ VGS=10V(mΩ) Typ.	RDS(on)@ VGS=10V(mΩ) Max.	RDS(on)@ VGS=4.5V(mΩ) Typ.	RDS(on)@ VGS=4.5V(mΩ) Max.	Download
MSR016P03D33	PDFN3*3	P	-30	±20	-30	-1	-2.5	13	16	19	25
MSR020N02S23	SOT-23	N	20	±20	6.5	0.4	1	/	/	16.2	20
MSR002N03SD	PDFN5*6	N	30	±20	160	1	2.2	1.6	2	2.3	3
MSR2R4N03SD	PDFN5*6	N	30	±20	180	1	2.5	1.95	2.4	/	/
MSR3R1N03SD	PDFN5*6	N	30	±20	120	1	2.2	2.1	3.1	3.7	5.5
MSR3R6N03SD	PDFN5*6	N	30	±20	150	1	2.5	2.9	3.6	/	/
MSR3R8N03D	TO-252	N	30	±20	150	1	2.5	3.2	3.8	/	/
MSR4R5N03D	TO-252	N	30	±20	90	1	2.5	3.7	4.5	6.6	7.9
MSR4R5N03D33	PDFN3*3	N	30	±20	90	1.1	2.1	3.6	4.5	5.3	7.2
MSR4R6N03D	TO-252	N	30	±20	80	1	2.5	3	4.5	5	8
MSR4R6N03SD	PDFN5*6	N	30	±20	60	1	3	3.6	4.6	6.1	7,5
MSR4R8N03D33	PDFN3*3	N	30	±20	80	1	2.5	3.8	4.8	6.6	7.9
MSR8R5N03D33	PDFN3*3	N	30	±20	56	1	2.5	6.3	8.5	9	13
MSR009N03P8	SOP-8	N	30	±20	12	1	2.5	7.5	9	11	15
MSR1R2N04TL	TOLL	N	40	±20	320	2	4	1	1.2	/	/
MSR1R5N04CTG	TO-263-7	N	40	±20	200	2	4	1	1.5	/	/
MSR002N04TL	TOLL	N	40	±20	160	2	4	1.7	2	/	/
MSR2R2N04SD	PDFN5*6	N	40	±20	130	2	4	1.8	2.2	/	/
MSR2R3N04CTB	TO-263	N	40	±20	120	2	4	1.8	2.3	/	/
MSR2R5N04CT	TO-220CB	N	40	±20	120	2	4	2	2.5	/	/
MSR8R5N04D33	PDFN3*3	N	40	±20	49	1	2.5	7	8.5	9.7	13
MSR2R5N06CT	TO-220CB	N	60	±20	195	2	4	2	2.5	/	/
MSR8R5N06D	TO-252	N	60	±20	80	2	4	7.4	8.5	/	/
MSR015M06SD2	PDFN5*6	N+N	60	±20	40	1	2.5	12	15	16	21
MSR015M06SD2	双基岛	N+N	60	±20	40	1	2.5	12	15	16	21
MSR017N06D	TO-252	N	60	±20	50	1	2.5	12	17	16	25
MSR033N06D	TO-252	N	60	±20	20	1	2.5	26	33	33	45
MSR007N07D	TO-252	N	67	±20	70	2	4	6.55	7	/	/
MSR007N07CT	TO-220CB	N	67	±20	70	2	4	6.55	7
MSR110N10D	TO-252	N	100	±20	15	1	3	95	110	100	130
MSR012N13CT	TO-220CB	N	130	±25	104	3	5	8.5	12	/	/
MSR013X03SD2	PDFN5*6 双基岛	N	30	±20	15	1.5	2.5	10	13	17	1
MSR013X03SD2	PDFN5*6 双基岛	P	-30	±25	-15	-1.5	-2.5	25	28	34	40
MSR013X03D4	TO-252-4L	N	30	±20	30	1	2.5	10	13	14	18
MSR013X03D4	TO-252-4L	P	-30	±20	-20	-1	-2.2	24	30	36	42
MSR020X03D4	TO-252-4L	N	30	±20	20	1	2.2	15	20	23.5	28
MSR020X03D4	TO-252-4L	P	-30	±20	-20	-1	-2.2	28	34	38	48
MSR015X06SD	PDFN5*6	N	60	±20	50	1	2.5	10	15	15	22
MSR015X06SD	PDFN5*6	P	-60	±20	-60	-1.2	-2.4	15	19	19	22

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