By Optimizing the diode Ta/Tb (Turn-on time/Turn-off time) soft recovery characteristics,it has greatly reduce the occurrence of harmonic oscillations to reduce or reduce the use of EMI suppression devices or specifications around the bridge, such as X capacitor, common mode inductor, differential mode inductor, etc.
The connection point of the negative poles of the two diodes is the "Positive pole" of the full-bridge DC output terminal, and the connection point of the positive poles of the two diodes is the "Negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic.
The Schottky rectifier bridge product is connected by four Schottky silicon diode bridges with four lead pins. The connection point of the negative pole of the two diodes is the "positive pole" of the full-bridge DC output terminal, and the connection point of the positive pole of the two diodes is the "negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic
The LOW VF rectifier bridge product is connected by four low-voltage drop rectifier silicon chips as a bridge, with four lead pins. The connection point of the two diode negative poles is the "Positive pole" of the full-bridge DC output terminal, and the connection point of the two diode positive poles is the "Negative pole" of the full-bridge DC output terminal, which is packaged with insulation plastic. LOW VF is a rectifier bridge with ultra low forward voltage drop.
The Inverter Bridge is integrated by four fast recovery diodes,which package four chips on a bracket for bridge connection with four lead pins. The connection point of the negative poles of the two diodes is the "positive pole" of the DC output terminal, the connection point of the positive poles of the two diodes is the "negative pole" of the DC output terminal, and the other two pins are the AC input terminals, which is packaged with insulation plastic .
A rectifier bridge with integrated sampling function, which realizes power distribution and circuit protection by collecting input current in the circuit.
The switching bridge is connected by four high-speed switching diodes as a bridge, with four lead pins. The connection point of the negative poles of the two diodes is the "positive pole" of the full-bridge DC output terminal, and the connection point of the positive poles of the two diodes is the "negative pole" of the full-bridge DC output terminal, which is sealed with insulation plastic.
World Schottky diode uses advanced packaging technology and have the characteristics of low forward voltage drop. The current covers 1A to 60A, and the voltage covers from 40V to 200V, which can meet the high efficiency and high reliability requirements of power products.
World LOW VF Schottky diode adopts advanced Trench technology with very low VF value and extremely low high- temperature leakage current, which can better meet the high efficiency and high reliability requirements of power supply.
World high-voltage Schottky diode has a low VF value and extremely low reverse leakage current (Ir), showing the good low-temperature rise characteristics. The VRRM is up to 350V, and the current range covers from 5A to 40A, which can better meet the high-efficiency and high-reliability requirements of high-voltage output power supplies.
World Fast recovery diode adopts advanced package technology, with voltages from 100V to 1700V, current ranging from 1A to 300A, and reverse recovery time from 16ns to 500ns. It is suitable for PFC circuits, high-frequency and high-voltage power supply, etc.
World Low Trr Super Fast Recovery Diode has an extremely low reverse recovery time Trr and an extremely low reverse recovery charge Qrr, as well as super-fast switching speed. It is used in PFC circuits under hard switching conditions and secondary rectification circuits of high-voltage and high-frequency power supplies.
World LOW VF Fast recovery diode has low VF value and low leakage current, which is applied to PFC circuit, high-frequency and high-voltage circuit, and secondary rectifier circuit.
World Common-Cathode and Common-Anode Fast recovery diode has the characteristics of good consistency, low VF value, low Trr and low leakage current, which is applied to high-frequency bridge rectifier circuit, positive and negative voltage output rectifier circuit and high-frequency high-voltage high-current circuit.
World switching transistor has a fast recovery time and high switching speed, and is widely used in power supply, audio, video, wireless communication, industry and other fields
Antistatic devices, ESD. For mainstream competing products, our company has alternative products, and we accept customized materials for ESD
Gas Discharge Tube, GDT. A full range of products are available, and ultra-thin products are currently being developed.
Zinc oxide varistor, MOV. Our company only produces SMD-MOV patch products and GMOV composite functional products.
Thyristor Surge Suppressors,TSS. All products are available
World SGT MOS has extremely low RDs (on), low Qg and Ciss, and fast switching speed, which can meet the requirements of product temperature rise and efficiency.
World Planar MOS has the characteristics of low RDs (on) and Ciss ,as well as strong EAS performance, which can meet the requirements of product efficiency and reliability.
World Trench MOS has low RDs (on), Qg, and Ciss, fast switching speed, strong EAS performance, and short -circuit resistance performance, which can meet the requirements of product efficiency and reliability.
World SJ (Super Junction) MOS adopts a multi-layer Epitaxial process, which has the characteristics of low RDS (on), small junction capacitance, small Qg, easy driving, and fast switching speed, making it easier for the power supply to achieve high efficiency and high reliability.
World silicon carbide diodes have extremely small reverse recovery time, high surge current, high efficiency and reliability, and are packaged with PDFN5 * 6, TO-252, TO-220, TO-247, etc.
World silicon carbide MOS has low RDS (on) , high switching speed, high efficiency and reliability, and is packaged in TOLL, TO-247, etc.
World Absorb Diode Rectifier,it has a longer storage time and lower Irr, as well as a longer and gentle slope of reverse recovery characteristics which can smoothly recover the current. It is applied to the RCD absorption circuit of power supply for better EMI characteristics to meet high efficiency and high reliability requirements of power supply products.
By Optimizing the diode Ta/Tb (Turn-on time/Turn-off time) soft recovery characteristics,it has greatly reduce the occurrence of harmonic oscillations to reduce or reduce the use of EMI suppression devices or specifications around the bridge, such as X capacitor, common mode inductor, differential mode inductor, etc.
Shenzhen World Industrial Co., Ltd. Cordially Invites You to visit the 2025 Ningbo International Lighting Exhibition
2025 Ningbo International Lighting Exhibition
Date: May 8–10, 2025
Venue: Ningbo International Convention & Exhibition Center
Our Booth: 4D28 (Shenzhen World Industrial Co.,Ltd)
We look forward to see you there!
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